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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistori-IGBTs-singolo > APT25GN120B2DQ2G
APT25GN120B2DQ2G
APT25GN120B2DQ2G
Modello di prodotti:
APT25GN120B2DQ2G
fabbricante:
Microsemi
Descrizione:
IGBT 1200V 67A 272W TMAX
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
19369 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
1.APT25GN120B2DQ2G.pdf2.APT25GN120B2DQ2G.pdf
Inchiesta

introduzione

We can supply APT25GN120B2DQ2G, use the request quote form to request APT25GN120B2DQ2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT25GN120B2DQ2G.The price and lead time for APT25GN120B2DQ2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT25GN120B2DQ2G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - rottura collettore-emettitore (max):1200V
Vce (on) (max) a VGE, Ic:2.1V @ 15V, 25A
Condizione di test:800V, 25A, 4.3 Ohm, 15V
Td (on / off) @ 25 ° C:22ns/280ns
di scambio energetico:2.15µJ (off)
Serie:-
Potenza - Max:272W
imballaggio:Tube
Contenitore / involucro:TO-247-3 Variant
Altri nomi:APT25GN120B2DQ2GMI
APT25GN120B2DQ2GMI-ND
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:32 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Tipo di ingresso:Standard
Tipo IGBT:NPT, Trench Field Stop
carica gate:155nC
Descrizione dettagliata:IGBT NPT, Trench Field Stop 1200V 67A 272W Through Hole
Corrente - collettore Pulsed (Icm):75A
Corrente - collettore (Ic) (max):67A
Email:[email protected]

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