Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT23F60S
APT23F60S
APT23F60S
Modello di prodotti:
APT23F60S
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 600V 23A D3PAK
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
10615 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT23F60S.pdf
Inchiesta

introduzione

We can supply APT23F60S, use the request quote form to request APT23F60S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT23F60S.The price and lead time for APT23F60S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT23F60S.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 1mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:D3Pak
Serie:POWER MOS 8™
Rds On (max) a Id, Vgs:290 mOhm @ 11A, 10V
Dissipazione di potenza (max):415W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:4415pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:110nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):600V
Descrizione dettagliata:N-Channel 600V 24A (Tc) 415W (Tc) Surface Mount D3Pak
Corrente - Drain continuo (Id) @ 25 ° C:24A (Tc)
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per APT23F60S

Immagine Modello di prodotti Produttori Descrizione vista
APT24F50S Image APT24F50S Microsemi MOSFET N-CH 500V 24A D3PAK Inchiesta
APT24F50B Image APT24F50B Microsemi MOSFET N-CH 500V 24A TO-247 Inchiesta
APT22F80S Image APT22F80S Microsemi MOSFET N-CH 800V 22A D3PAK Inchiesta
APT20SCD120S Image APT20SCD120S Microsemi DIODE SCHOTTKY 1.2KV 68A D3PAK Inchiesta
APT21M100J Image APT21M100J Microsemi MOSFET N-CH 1000V 21A SOT-227 Inchiesta
APT24M80S Image APT24M80S Microsemi MOSFET N-CH 800V 25A D3PAK Inchiesta
APT25GN120B2DQ2G Image APT25GN120B2DQ2G Microsemi IGBT 1200V 67A 272W TMAX Inchiesta
APT22F100J Image APT22F100J Microsemi MOSFET N-CH 1000V 23A SOT-227 Inchiesta
APT20SCD65K Image APT20SCD65K Microsemi DIODE SILICON 650V 32A TO220 Inchiesta
APT22F80B Image APT22F80B Microsemi MOSFET N-CH 800V 22A TO-247 Inchiesta
APT25GLQ120JCU2 Image APT25GLQ120JCU2 Microsemi PWR MOD IGBT4 1200V SOT227 Inchiesta
APT23F60B Image APT23F60B Microsemi MOSFET N-CH 600V 23A TO-247 Inchiesta
APT22F120B2 Image APT22F120B2 Microsemi MOSFET N-CH 1200V 23A T-MAX Inchiesta
APT22F120L Image APT22F120L Microsemi MOSFET N-CH 1200V 23A TO264 Inchiesta
APT24M120B2 Image APT24M120B2 Microsemi MOSFET N-CH 1200V 24A T-MAX Inchiesta
APT25GF120JCU2 Image APT25GF120JCU2 Microsemi MOD IGBT NPT SIC CHOPPER SOT227 Inchiesta
APT20SCD120B Image APT20SCD120B Microsemi DIODE SCHOTTKY 1.2KV 68A Inchiesta
APT24M80B Image APT24M80B Microsemi MOSFET N-CH 800V 25A TO-247 Inchiesta
APT25GN120BG Image APT25GN120BG Microsemi IGBT 1200V 67A 272W TO247 Inchiesta
APT24M120L Image APT24M120L Microsemi Corporation MOSFET N-CH 1200V 24A TO-264 Inchiesta

Latest Notizie