Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT24M80S
APT24M80S
APT24M80S
Modello di prodotti:
APT24M80S
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 800V 25A D3PAK
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
32431 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT24M80S.pdf
Inchiesta

introduzione

We can supply APT24M80S, use the request quote form to request APT24M80S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT24M80S.The price and lead time for APT24M80S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT24M80S.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 1mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:D3Pak
Serie:POWER MOS 8™
Rds On (max) a Id, Vgs:390 mOhm @ 12A, 10V
Dissipazione di potenza (max):625W (Tc)
imballaggio:Bulk
Contenitore / involucro:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:18 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:4595pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:150nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):800V
Descrizione dettagliata:N-Channel 800V 25A (Tc) 625W (Tc) Surface Mount D3Pak
Corrente - Drain continuo (Id) @ 25 ° C:25A (Tc)
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per APT24M80S

Immagine Modello di prodotti Produttori Descrizione vista
APT24F50S Image APT24F50S Microsemi MOSFET N-CH 500V 24A D3PAK Inchiesta
APT24M80B Image APT24M80B Microsemi MOSFET N-CH 800V 25A TO-247 Inchiesta
APT25GN120BG Image APT25GN120BG Microsemi IGBT 1200V 67A 272W TO247 Inchiesta
APT25GF120JCU2 Image APT25GF120JCU2 Microsemi MOD IGBT NPT SIC CHOPPER SOT227 Inchiesta
APT24M120L Image APT24M120L Microsemi Corporation MOSFET N-CH 1200V 24A TO-264 Inchiesta
APT25GN120SG Image APT25GN120SG Microsemi IGBT 1200V 67A 272W D3PAK Inchiesta
APT25GP90BG Image APT25GP90BG Microsemi IGBT 900V 72A 417W TO247 Inchiesta
APT22F120L Image APT22F120L Microsemi MOSFET N-CH 1200V 23A TO264 Inchiesta
APT25GP90BDQ1G Image APT25GP90BDQ1G Microsemi IGBT 900V 72A 417W TO247 Inchiesta
APT22F80S Image APT22F80S Microsemi MOSFET N-CH 800V 22A D3PAK Inchiesta
APT24M120B2 Image APT24M120B2 Microsemi MOSFET N-CH 1200V 24A T-MAX Inchiesta
APT25GN120B2DQ2G Image APT25GN120B2DQ2G Microsemi IGBT 1200V 67A 272W TMAX Inchiesta
APT23F60S Image APT23F60S Microsemi MOSFET N-CH 600V 23A D3PAK Inchiesta
APT25GLQ120JCU2 Image APT25GLQ120JCU2 Microsemi PWR MOD IGBT4 1200V SOT227 Inchiesta
APT25GP120BG Image APT25GP120BG Microsemi IGBT 1200V 69A 417W TO247 Inchiesta
APT25GR120B Image APT25GR120B Microsemi IGBT 1200V 75A 521W TO247 Inchiesta
APT24F50B Image APT24F50B Microsemi MOSFET N-CH 500V 24A TO-247 Inchiesta
APT22F80B Image APT22F80B Microsemi MOSFET N-CH 800V 22A TO-247 Inchiesta
APT23F60B Image APT23F60B Microsemi MOSFET N-CH 600V 23A TO-247 Inchiesta
APT25GP120BDQ1G Image APT25GP120BDQ1G Microsemi IGBT 1200V 69A 417W TO247 Inchiesta

Latest Notizie