SCT3022ALGC11
SCT3022ALGC11
Nomor bagian:
SCT3022ALGC11
Pabrikan:
LAPIS Semiconductor
Deskripsi:
MOSFET NCH 650V 93A TO247N
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
74916 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
1.SCT3022ALGC11.pdf2.SCT3022ALGC11.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:5.6V @ 18.2mA
Vgs (Max):+22V, -4V
Teknologi:SiCFET (Silicon Carbide)
Paket Perangkat pemasok:TO-247N
Seri:-
Rds Pada (Max) @ Id, Vgs:28.6 mOhm @ 36A, 18V
Power Disipasi (Max):339W (Tc)
Pengemasan:Tube
Paket / Case:TO-247-3
Suhu Operasional:175°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:2208pF @ 500V
Gate Charge (Qg) (Max) @ Vgs:133nC @ 18V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):18V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N
Current - Continuous Drain (Id) @ 25 ° C:93A (Tc)
Email:[email protected]

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