SCT3022ALGC11
SCT3022ALGC11
Part Number:
SCT3022ALGC11
Výrobce:
LAPIS Semiconductor
Popis:
MOSFET NCH 650V 93A TO247N
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
74916 Pieces
Čas doručení:
1-2 days
Datový list:
1.SCT3022ALGC11.pdf2.SCT3022ALGC11.pdf

Úvod

We can supply SCT3022ALGC11, use the request quote form to request SCT3022ALGC11 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SCT3022ALGC11.The price and lead time for SCT3022ALGC11 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SCT3022ALGC11.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:5.6V @ 18.2mA
Vgs (Max):+22V, -4V
Technika:SiCFET (Silicon Carbide)
Dodavatel zařízení Package:TO-247N
Série:-
RDS On (Max) @ Id, Vgs:28.6 mOhm @ 36A, 18V
Ztráta energie (Max):339W (Tc)
Obal:Tube
Paket / krabice:TO-247-3
Provozní teplota:175°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:2208pF @ 500V
Nabíjení brány (Qg) (Max) @ Vgs:133nC @ 18V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):18V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N
Proud - kontinuální odtok (Id) @ 25 ° C:93A (Tc)
Email:[email protected]

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