SI4200DY-T1-GE3
Dio brojeva:
SI4200DY-T1-GE3
Proizvođač:
Electro-Films (EFI) / Vishay
Opis:
MOSFET 2N-CH 25V 8A 8SOIC
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
74278 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
SI4200DY-T1-GE3.pdf

Uvod

We can supply SI4200DY-T1-GE3, use the request quote form to request SI4200DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4200DY-T1-GE3.The price and lead time for SI4200DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4200DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Vgs (th) (maks.) @ Id:2.2V @ 250µA
Paket uređaja za dobavljače:8-SO
Niz:TrenchFET®
Rds On (Max) @ Id, Vgs:25 mOhm @ 7.3A, 10V
Snaga - maks:2.8W
Ambalaža:Tape & Reel (TR)
Paket / slučaj:8-SOIC (0.154", 3.90mm Width)
Druga imena:SI4200DY-T1-GE3-ND
SI4200DY-T1-GE3TR
Radna temperatura:-55°C ~ 150°C (TJ)
Vrsta montaže:Surface Mount
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Status slobodnog olova / RoHS-a:Lead free / RoHS Compliant
Ulazni kapacitet (Ciss) (maks.) @ Vds:415pF @ 13V
Punjenje vrata (Qg) (maks.) @ Vgs:12nC @ 10V
Vrsta FET-a:2 N-Channel (Dual)
FET značajka:Logic Level Gate
Ispustite izvor napona (Vdss):25V
Detaljan opis:Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:8A
Email:[email protected]

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