SI4200DY-T1-GE3
Delenummer:
SI4200DY-T1-GE3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET 2N-CH 25V 8A 8SOIC
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
74278 Pieces
Leveringstid:
1-2 days
Dataark:
SI4200DY-T1-GE3.pdf

Introduksjon

We can supply SI4200DY-T1-GE3, use the request quote form to request SI4200DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4200DY-T1-GE3.The price and lead time for SI4200DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4200DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:2.2V @ 250µA
Leverandør Enhetspakke:8-SO
Serie:TrenchFET®
Rds På (Maks) @ Id, Vgs:25 mOhm @ 7.3A, 10V
Strøm - Maks:2.8W
emballasje:Tape & Reel (TR)
Pakke / tilfelle:8-SOIC (0.154", 3.90mm Width)
Andre navn:SI4200DY-T1-GE3-ND
SI4200DY-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:415pF @ 13V
Gateavgift (Qg) (Maks) @ Vgs:12nC @ 10V
FET Type:2 N-Channel (Dual)
FET-funksjonen:Logic Level Gate
Drain til Source Voltage (VDSS):25V
Detaljert beskrivelse:Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:8A
Email:[email protected]

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