ZXMC3A18DN8TA
ZXMC3A18DN8TA
Modèle de produit:
ZXMC3A18DN8TA
Fabricant:
Diodes Incorporated
La description:
MOSFET N/P-CH 30V 8-SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
66686 Pieces
Heure de livraison:
1-2 days
Fiche technique:
ZXMC3A18DN8TA.pdf

introduction

We can supply ZXMC3A18DN8TA, use the request quote form to request ZXMC3A18DN8TA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXMC3A18DN8TA.The price and lead time for ZXMC3A18DN8TA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXMC3A18DN8TA.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1V @ 250µA (Min)
Package composant fournisseur:8-SO
Séries:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 5.8A, 10V
Puissance - Max:1.8W
Emballage:Original-Reel®
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:ZXMC3A18DN8DKR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1800pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:36nC @ 10V
type de FET:N and P-Channel
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):30V
Description détaillée:Mosfet Array N and P-Channel 30V 5.8A, 4.8A 1.8W Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:5.8A, 4.8A
Email:[email protected]

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