ZXM66N02N8TA
ZXM66N02N8TA
Modèle de produit:
ZXM66N02N8TA
Fabricant:
Diodes Incorporated
La description:
MOSFET N-CH 20V 9A 8-SOIC
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
16090 Pieces
Heure de livraison:
1-2 days
Fiche technique:
ZXM66N02N8TA.pdf

introduction

We can supply ZXM66N02N8TA, use the request quote form to request ZXM66N02N8TA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXM66N02N8TA.The price and lead time for ZXM66N02N8TA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXM66N02N8TA.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:700mV @ 250µA
Vgs (Max):±12V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:8-SO
Séries:-
Rds On (Max) @ Id, Vgs:15 mOhm @ 4.1A, 4.5V
Dissipation de puissance (max):2.5W (Ta)
Emballage:Original-Reel®
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:ZXM66N02N8DKR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):2.5V, 4.5V
Tension drain-source (Vdss):20V
Description détaillée:N-Channel 20V 9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:9A (Ta)
Email:[email protected]

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