TK8Q65W,S1Q
TK8Q65W,S1Q
Modèle de produit:
TK8Q65W,S1Q
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 650V 7.8A IPAK
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
69670 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK8Q65W,S1Q.pdf

introduction

We can supply TK8Q65W,S1Q, use the request quote form to request TK8Q65W,S1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK8Q65W,S1Q.The price and lead time for TK8Q65W,S1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK8Q65W,S1Q.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3.5V @ 300µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:I-PAK
Séries:DTMOSIV
Rds On (Max) @ Id, Vgs:670 mOhm @ 3.9A, 10V
Dissipation de puissance (max):80W (Tc)
Emballage:Tube
Package / Boîte:TO-251-3 Stub Leads, IPak
Autres noms:TK8Q65W,S1Q(S
TK8Q65WS1Q
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:570pF @ 300V
Charge de la porte (Qg) (Max) @ Vgs:16nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):650V
Description détaillée:N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK
Courant - Drainage continu (Id) à 25 ° C:7.8A (Ta)
Email:[email protected]

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