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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > SSM3K15ACTC,L3F
SSM3K15ACTC,L3F
SSM3K15ACTC,L3F
Modèle de produit:
SSM3K15ACTC,L3F
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 30V 100MA CST3C
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
69764 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SSM3K15ACTC,L3F.pdf
Enquête

introduction

We can supply SSM3K15ACTC,L3F, use the request quote form to request SSM3K15ACTC,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM3K15ACTC,L3F.The price and lead time for SSM3K15ACTC,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM3K15ACTC,L3F.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.5V @ 100µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:CST3C
Séries:U-MOSIII
Rds On (Max) @ Id, Vgs:3.6 Ohm @ 10mA, 4V
Dissipation de puissance (max):500mW (Ta)
Emballage:Tape & Reel (TR)
Package / Boîte:SC-101, SOT-883
Autres noms:SSM3K15ACTC,L3F(B
SSM3K15ACTC,L3F(T
SSM3K15ACTCL3F
SSM3K15ACTCL3F(B
SSM3K15ACTCL3F(T
SSM3K15ACTCL3FTR
Température de fonctionnement:150°C
Type de montage:Surface Mount
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:13.5pF @ 3V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):2.5V, 4V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 100mA (Ta) 500mW (Ta) Surface Mount CST3C
Courant - Drainage continu (Id) à 25 ° C:100mA (Ta)
Email:[email protected]

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