SQ3419AEEV-T1_GE3
SQ3419AEEV-T1_GE3
Modèle de produit:
SQ3419AEEV-T1_GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET P-CHANNEL 40V 6.9A 6TSOP
quantité disponible:
23035 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SQ3419AEEV-T1_GE3.pdf

introduction

We can supply SQ3419AEEV-T1_GE3, use the request quote form to request SQ3419AEEV-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ3419AEEV-T1_GE3.The price and lead time for SQ3419AEEV-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ3419AEEV-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±12V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:6-TSOP
Séries:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:61 mOhm @ 2.5A, 10V
Dissipation de puissance (max):5W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:SOT-23-6 Thin, TSOT-23-6
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Capacité d'entrée (Ciss) (Max) @ Vds:975pF @ 20V
Charge de la porte (Qg) (Max) @ Vgs:12.5nC @ 4.5V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):40V
Description détaillée:P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP
Courant - Drainage continu (Id) à 25 ° C:6.9A (Tc)
Email:[email protected]

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