SQ3419AEEV-T1_GE3
SQ3419AEEV-T1_GE3
Artikelnummer:
SQ3419AEEV-T1_GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CHANNEL 40V 6.9A 6TSOP
verfügbare Anzahl:
23035 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SQ3419AEEV-T1_GE3.pdf

Einführung

We can supply SQ3419AEEV-T1_GE3, use the request quote form to request SQ3419AEEV-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ3419AEEV-T1_GE3.The price and lead time for SQ3419AEEV-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ3419AEEV-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:6-TSOP
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:61 mOhm @ 2.5A, 10V
Verlustleistung (max):5W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Eingabekapazität (Ciss) (Max) @ Vds:975pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:12.5nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:P-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TSOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.9A (Tc)
Email:[email protected]

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