SI7540ADP-T1-GE3
SI7540ADP-T1-GE3
Modèle de produit:
SI7540ADP-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N/P-CH POWERPAK8
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
43318 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SI7540ADP-T1-GE3.pdf

introduction

We can supply SI7540ADP-T1-GE3, use the request quote form to request SI7540ADP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7540ADP-T1-GE3.The price and lead time for SI7540ADP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7540ADP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.4V @ 250µA
Package composant fournisseur:PowerPAK® SO-8 Dual
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:28 mOhm @ 12A, 10V
Puissance - Max:3.5W
Emballage:Cut Tape (CT)
Package / Boîte:PowerPAK® SO-8 Dual
Autres noms:SI7540ADP-T1-GE3CT
Température de fonctionnement:-55°C ~ 150°C
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1310pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:48nC @ 10V
type de FET:N and P-Channel
Fonction FET:-
Tension drain-source (Vdss):20V
Description détaillée:Mosfet Array N and P-Channel 20V 12A, 9A 3.5W Surface Mount PowerPAK® SO-8 Dual
Courant - Drainage continu (Id) à 25 ° C:12A, 9A
Email:[email protected]

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