RN4601(TE85L,F)
RN4601(TE85L,F)
Modèle de produit:
RN4601(TE85L,F)
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS NPN/PNP PREBIAS 0.3W SM6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
48690 Pieces
Heure de livraison:
1-2 days
Fiche technique:
RN4601(TE85L,F).pdf

introduction

We can supply RN4601(TE85L,F), use the request quote form to request RN4601(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN4601(TE85L,F).The price and lead time for RN4601(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN4601(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Package composant fournisseur:SM6
Séries:-
Résistance - Base de l'émetteur (R2):4.7 kOhms
Résistance - Base (R1):4.7 kOhms
Puissance - Max:300mW
Emballage:Cut Tape (CT)
Package / Boîte:SC-74, SOT-457
Autres noms:RN4601(TE85LF)CT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:250MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6
Gain en courant DC (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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