PQMD12Z
PQMD12Z
Modèle de produit:
PQMD12Z
Fabricant:
Nexperia
La description:
TRANS NPN/PNP PREBIAS 0.35W 6DFN
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
18680 Pieces
Heure de livraison:
1-2 days
Fiche technique:
PQMD12Z.pdf

introduction

We can supply PQMD12Z, use the request quote form to request PQMD12Z pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PQMD12Z.The price and lead time for PQMD12Z depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PQMD12Z.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Package composant fournisseur:DFN1010B-6
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms
Résistance - Base (R1):47 kOhms
Puissance - Max:350mW
Emballage:Cut Tape (CT)
Package / Boîte:6-XFDFN Exposed Pad
Autres noms:1727-1479-1
568-10950-1
568-10950-1-ND
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:8 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:230MHz, 180MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 350mW Surface Mount DFN1010B-6
Gain en courant DC (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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