NSVMUN2112T1G
NSVMUN2112T1G
Modèle de produit:
NSVMUN2112T1G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS PNP 50V BIPOLAR SC59-3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
48531 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NSVMUN2112T1G.pdf

introduction

We can supply NSVMUN2112T1G, use the request quote form to request NSVMUN2112T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSVMUN2112T1G.The price and lead time for NSVMUN2112T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSVMUN2112T1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:PNP - Pre-Biased
Package composant fournisseur:SC-59-3
Séries:-
Résistance - Base de l'émetteur (R2):22 kOhms
Résistance - Base (R1):22 kOhms
Puissance - Max:230mW
Emballage:Tape & Reel (TR)
Package / Boîte:TO-236-3, SC-59, SOT-23-3
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:10 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Description détaillée:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59-3
Gain en courant DC (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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