NSV9435T1G
NSV9435T1G
Modèle de produit:
NSV9435T1G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS PREBIAS PNP 0.72W SOT223-4
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
63712 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NSV9435T1G.pdf

introduction

We can supply NSV9435T1G, use the request quote form to request NSV9435T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSV9435T1G.The price and lead time for NSV9435T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSV9435T1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):30V
Vce Saturation (Max) @ Ib, Ic:550mV @ 300mA, 3A
Transistor Type:PNP - Pre-Biased
Package composant fournisseur:SOT-223 (TO-261)
Séries:-
Résistance - Base (R1):10 kOhms
Puissance - Max:720mW
Emballage:Tape & Reel (TR)
Package / Boîte:TO-261-4, TO-261AA
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:4 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:110MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 3A 110MHz 720mW Surface Mount SOT-223 (TO-261)
Gain en courant DC (hFE) (Min) @ Ic, Vce:125 @ 800mA, 1V
Courant - Collecteur Cutoff (Max):-
Courant - Collecteur (Ic) (max):3A
Email:[email protected]

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