MUN5136DW1T1
MUN5136DW1T1
Modèle de produit:
MUN5136DW1T1
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS 2PNP PREBIAS 0.25W SOT363
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
78888 Pieces
Heure de livraison:
1-2 days
Fiche technique:
MUN5136DW1T1.pdf

introduction

We can supply MUN5136DW1T1, use the request quote form to request MUN5136DW1T1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MUN5136DW1T1.The price and lead time for MUN5136DW1T1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MUN5136DW1T1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:2 PNP - Pre-Biased (Dual)
Package composant fournisseur:SC-88/SC70-6/SOT-363
Séries:-
Résistance - Base de l'émetteur (R2):100 kOhms
Résistance - Base (R1):100 kOhms
Puissance - Max:250mW
Emballage:Tape & Reel (TR)
Package / Boîte:6-TSSOP, SC-88, SOT-363
Autres noms:MUN5136DW1T1OS
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Fréquence - Transition:-
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Gain en courant DC (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Numéro de pièce de base:MUN51**DW1T
Email:[email protected]

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