MJD253T4G
MJD253T4G
Modèle de produit:
MJD253T4G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS PNP 100V 4A DPAK
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
12216 Pieces
Heure de livraison:
1-2 days
Fiche technique:
MJD253T4G.pdf

introduction

We can supply MJD253T4G, use the request quote form to request MJD253T4G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MJD253T4G.The price and lead time for MJD253T4G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MJD253T4G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):100V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Transistor Type:PNP
Package composant fournisseur:DPAK
Séries:-
Puissance - Max:1.4W
Emballage:Tape & Reel (TR)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:MJD253T4GOS
MJD253T4GOS-ND
MJD253T4GOSTR
Température de fonctionnement:-65°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:6 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:40MHz
Description détaillée:Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Surface Mount DPAK
Gain en courant DC (hFE) (Min) @ Ic, Vce:40 @ 200mA, 1V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):4A
Numéro de pièce de base:MJD253
Email:[email protected]

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