Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTU1R4N60P
IXTU1R4N60P
IXTU1R4N60P
Modèle de produit:
IXTU1R4N60P
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 600V 1.4A TO251
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
56594 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTU1R4N60P.pdf
Enquête

introduction

We can supply IXTU1R4N60P, use the request quote form to request IXTU1R4N60P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTU1R4N60P.The price and lead time for IXTU1R4N60P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTU1R4N60P.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5.5V @ 25µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-251
Séries:PolarHV™
Rds On (Max) @ Id, Vgs:9 Ohm @ 700mA, 10V
Dissipation de puissance (max):50W (Tc)
Emballage:Tube
Package / Boîte:TO-251-3 Short Leads, IPak, TO-251AA
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:140pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:5.2nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 1.4A (Tc) 50W (Tc) Through Hole TO-251
Courant - Drainage continu (Id) à 25 ° C:1.4A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes IXTU1R4N60P

image Modèle de produit Fabricant La description Vue
IXTU44N10T Image IXTU44N10T IXYS Corporation MOSFET N-CH 100V 44A TO-251 Enquête
IXTU5N50P IXYS Corporation MOSFET N-CH 500V 4.8A TO-252 Enquête
IXTU64N055T Image IXTU64N055T IXYS Corporation MOSFET N-CH 55V 64A TO-251 Enquête
IXTU05N120 Image IXTU05N120 IXYS Corporation MOSFET N-CH 1200V 0.5A TO-251 Enquête
IXTU01N100 Image IXTU01N100 IXYS Corporation MOSFET N-CH 1KV .1A I-PAK Enquête
IXTU08N100P Image IXTU08N100P IXYS Corporation MOSFET N-CH 1000V 8A TO-251 Enquête
IXTT96N20P Image IXTT96N20P IXYS Corporation MOSFET N-CH 200V 96A TO-268 Enquête
IXTU8N70X2 Image IXTU8N70X2 IXYS Corporation MOSFET N-CHANNEL 700V 8A TO251 Enquête
IXTU50N085T Image IXTU50N085T IXYS Corporation MOSFET N-CH 85V 50A TO-251 Enquête
IXTU55N075T Image IXTU55N075T IXYS Corporation MOSFET N-CH 75V 55A TO-251 Enquête
IXTU12N06T Image IXTU12N06T IXYS Corporation MOSFET N-CH 60V 12A TO-251 Enquête
IXTU06N120P Image IXTU06N120P IXYS Corporation MOSFET N-CH 1200V 0.6A TO-251 Enquête
IXTU01N80 Image IXTU01N80 IXYS Corporation MOSFET N-CH 800V 0.1A TO-251 Enquête
IXTV102N20T IXYS Corporation MOSFET N-CH 200V 102A PLUS220 Enquête
IXTU2N80P Image IXTU2N80P IXYS Corporation MOSFET N-CH TO-251 Enquête
IXTU02N50D Image IXTU02N50D IXYS Corporation MOSFET N-CH 500V 0.2A TO-251 Enquête
IXTU05N100 Image IXTU05N100 IXYS Corporation MOSFET N-CH 1000V 750MA TO-251 Enquête
IXTV03N400S IXYS Corporation MOSFET N-CH 4000V .3A PLUS 220 Enquête
IXTU01N100D Image IXTU01N100D IXYS Corporation MOSFET N-CH 1000V 0.1A TO-251 Enquête
IXTV02N250S IXYS Corporation MOSFET N-CH 2500V .2A PLUS220 Enquête

Latest Nouvelles