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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTU08N100P
IXTU08N100P
IXTU08N100P
Modèle de produit:
IXTU08N100P
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 1000V 8A TO-251
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
58475 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTU08N100P.pdf
Enquête

introduction

We can supply IXTU08N100P, use the request quote form to request IXTU08N100P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTU08N100P.The price and lead time for IXTU08N100P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTU08N100P.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:-
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-251
Séries:-
Rds On (Max) @ Id, Vgs:-
Dissipation de puissance (max):-
Emballage:Tube
Package / Boîte:TO-251-3 Short Leads, IPak, TO-251AA
Température de fonctionnement:-
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
type de FET:N-Channel
Fonction FET:-
Tension drain-source (Vdss):1000V
Description détaillée:N-Channel 1000V 8A (Tc) Through Hole TO-251
Courant - Drainage continu (Id) à 25 ° C:8A (Tc)
Email:[email protected]

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