HN1B04FE-GR,LF
HN1B04FE-GR,LF
Modèle de produit:
HN1B04FE-GR,LF
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS NPN/PNP 50V 0.15A ES6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
16024 Pieces
Heure de livraison:
1-2 days
Fiche technique:
HN1B04FE-GR,LF.pdf

introduction

We can supply HN1B04FE-GR,LF, use the request quote form to request HN1B04FE-GR,LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN1B04FE-GR,LF.The price and lead time for HN1B04FE-GR,LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN1B04FE-GR,LF.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:NPN, PNP
Package composant fournisseur:ES6
Séries:-
Puissance - Max:100mW
Emballage:Original-Reel®
Package / Boîte:SOT-563, SOT-666
Autres noms:HN1B04FE-GR(5LFTDKR
HN1B04FE-GR(5LFTDKR-ND
HN1B04FE-GRLF(TDKR
HN1B04FE-GRLF(TDKR-ND
HN1B04FE-GRLFDKR
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:80MHz
Description détaillée:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
Gain en courant DC (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):150mA
Email:[email protected]

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