HN1B04FE-GR,LF
HN1B04FE-GR,LF
Artikelnummer:
HN1B04FE-GR,LF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS NPN/PNP 50V 0.15A ES6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
16024 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HN1B04FE-GR,LF.pdf

Einführung

We can supply HN1B04FE-GR,LF, use the request quote form to request HN1B04FE-GR,LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN1B04FE-GR,LF.The price and lead time for HN1B04FE-GR,LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN1B04FE-GR,LF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor-Typ:NPN, PNP
Supplier Device-Gehäuse:ES6
Serie:-
Leistung - max:100mW
Verpackung:Original-Reel®
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:HN1B04FE-GR(5LFTDKR
HN1B04FE-GR(5LFTDKR-ND
HN1B04FE-GRLF(TDKR
HN1B04FE-GRLF(TDKR-ND
HN1B04FE-GRLFDKR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:16 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:80MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
DC Stromgewinn (HFE) (Min) @ Ic, VCE:200 @ 2mA, 6V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):150mA
Email:[email protected]

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