FQP10N20C
Modèle de produit:
FQP10N20C
Fabricant:
La description:
MOSFET N-CH 200V 9.5A TO-220
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
24727 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.FQP10N20C.pdf2.FQP10N20C.pdf

introduction

We can supply FQP10N20C, use the request quote form to request FQP10N20C pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQP10N20C.The price and lead time for FQP10N20C depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQP10N20C.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:510pF @ 25V
Tension - Ventilation:TO-220-3
Vgs (th) (Max) @ Id:360 mOhm @ 4.75A, 10V
Vgs (Max):10V
La technologie:MOSFET (Metal Oxide)
Séries:QFET®
État RoHS:Tube
Rds On (Max) @ Id, Vgs:9.5A (Tc)
Polarisation:TO-220-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:6 Weeks
Référence fabricant:FQP10N20C
Capacité d'entrée (Ciss) (Max) @ Vds:26nC @ 10V
type de IGBT:±30V
Charge de la porte (Qg) (Max) @ Vgs:4V @ 250µA
Fonction FET:N-Channel
Description élargie:N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-220-3
Tension drain-source (Vdss):-
La description:MOSFET N-CH 200V 9.5A TO-220
Courant - Drainage continu (Id) à 25 ° C:200V
Ratio de capacité:72W (Tc)
Email:[email protected]

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