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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > FQA36P15
FQA36P15
FQA36P15
Modèle de produit:
FQA36P15
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET P-CH 150V 36A TO-3P
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
79238 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FQA36P15.pdf
Enquête

introduction

We can supply FQA36P15, use the request quote form to request FQA36P15 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQA36P15.The price and lead time for FQA36P15 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQA36P15.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-3PN
Séries:QFET®
Rds On (Max) @ Id, Vgs:90 mOhm @ 18A, 10V
Dissipation de puissance (max):294W (Tc)
Emballage:Tube
Package / Boîte:TO-3P-3, SC-65-3
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:8 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:3320pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:105nC @ 10V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):150V
Description détaillée:P-Channel 150V 36A (Tc) 294W (Tc) Through Hole TO-3PN
Courant - Drainage continu (Id) à 25 ° C:36A (Tc)
Email:[email protected]

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