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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > FQA35N40
FQA35N40
FQA35N40
Modèle de produit:
FQA35N40
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET N-CH 400V 35A TO-3P
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
17925 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FQA35N40.pdf
Enquête

introduction

We can supply FQA35N40, use the request quote form to request FQA35N40 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQA35N40.The price and lead time for FQA35N40 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQA35N40.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-3P
Séries:QFET®
Rds On (Max) @ Id, Vgs:105 mOhm @ 17.5A, 10V
Dissipation de puissance (max):310W (Tc)
Emballage:Tube
Package / Boîte:TO-3P-3, SC-65-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:5600pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:140nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):400V
Description détaillée:N-Channel 400V 35A (Tc) 310W (Tc) Through Hole TO-3P
Courant - Drainage continu (Id) à 25 ° C:35A (Tc)
Email:[email protected]

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