CDBGBSC201200-G
Modèle de produit:
CDBGBSC201200-G
Fabricant:
Comchip Technology
La description:
DIODE DUAL SILICON CARBIDE POWER
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
49634 Pieces
Heure de livraison:
1-2 days
Fiche technique:
CDBGBSC201200-G.pdf

introduction

We can supply CDBGBSC201200-G, use the request quote form to request CDBGBSC201200-G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CDBGBSC201200-G.The price and lead time for CDBGBSC201200-G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CDBGBSC201200-G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:1.8V @ 10A
Tension - inverse (Vr) (max):1200V
Package composant fournisseur:TO-247
La vitesse:No Recovery Time > 500mA (Io)
Séries:-
Temps de recouvrement inverse (trr):0ns
Package / Boîte:TO-247-3
Température d'utilisation - Jonction:-55°C ~ 175°C
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Silicon Carbide Schottky
Configuration diode:1 Pair Common Cathode
Description détaillée:Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 25.9A (DC) Through Hole TO-247-3
Courant - fuite, inverse à Vr:100µA @ 1200V
Courant - Moyen redressé (Io) (par diode):25.9A (DC)
Email:[email protected]

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