BS108,126
BS108,126
Modèle de produit:
BS108,126
Fabricant:
NXP Semiconductors / Freescale
La description:
MOSFET N-CH 200V 300MA SOT54
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
35269 Pieces
Heure de livraison:
1-2 days
Fiche technique:
BS108,126.pdf

introduction

We can supply BS108,126, use the request quote form to request BS108,126 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BS108,126.The price and lead time for BS108,126 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BS108,126.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.8V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-92-3
Séries:-
Rds On (Max) @ Id, Vgs:5 Ohm @ 100mA, 2.8V
Dissipation de puissance (max):1W (Ta)
Emballage:Tape & Box (TB)
Package / Boîte:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Autres noms:934003840126
BS108 AMO
BS108 AMO-ND
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:120pF @ 25V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):2.8V
Tension drain-source (Vdss):200V
Description détaillée:N-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
Courant - Drainage continu (Id) à 25 ° C:300mA (Ta)
Email:[email protected]

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