BS107ARL1
Modèle de produit:
BS107ARL1
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET N-CH 200V 0.25A TO-92
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
40588 Pieces
Heure de livraison:
1-2 days
Fiche technique:
BS107ARL1.pdf

introduction

We can supply BS107ARL1, use the request quote form to request BS107ARL1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BS107ARL1.The price and lead time for BS107ARL1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BS107ARL1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-92-3
Séries:-
Rds On (Max) @ Id, Vgs:6.4 Ohm @ 250mA, 10V
Dissipation de puissance (max):350mW (Ta)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Capacité d'entrée (Ciss) (Max) @ Vds:60pF @ 25V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):200V
Description détaillée:N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
Courant - Drainage continu (Id) à 25 ° C:250mA (Ta)
Email:[email protected]

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