AUIRF7343Q
AUIRF7343Q
Modèle de produit:
AUIRF7343Q
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
36453 Pieces
Heure de livraison:
1-2 days
Fiche technique:
AUIRF7343Q.pdf

introduction

We can supply AUIRF7343Q, use the request quote form to request AUIRF7343Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AUIRF7343Q.The price and lead time for AUIRF7343Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AUIRF7343Q.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Package composant fournisseur:8-SO
Séries:HEXFET®
Rds On (Max) @ Id, Vgs:50 mOhm @ 4.7A, 10V
Puissance - Max:2W
Emballage:Tube
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:SP001517318
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:740pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:36nC @ 10V
type de FET:N and P-Channel
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):55V
Description détaillée:Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:4.7A, 3.4A
Email:[email protected]

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