AOWF412
AOWF412
Modèle de produit:
AOWF412
Fabricant:
Alpha and Omega Semiconductor, Inc.
La description:
MOSFET N-CH 100V 7.8A TO262F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
53598 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.AOWF412.pdf2.AOWF412.pdf

introduction

We can supply AOWF412, use the request quote form to request AOWF412 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AOWF412.The price and lead time for AOWF412 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AOWF412.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3.8V @ 250µA
Vgs (Max):±25V
La technologie:MOSFET (Metal Oxide)
Séries:SDMOS™
Rds On (Max) @ Id, Vgs:15.8 mOhm @ 20A, 10V
Dissipation de puissance (max):2.1W (Ta), 33W (Tc)
Emballage:Tube
Package / Boîte:TO-262-3 Full Pack, I²Pak
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:26 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:3220pF @ 50V
Charge de la porte (Qg) (Max) @ Vgs:54nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):7V, 10V
Tension drain-source (Vdss):100V
Description détaillée:N-Channel 100V 7.8A (Ta), 30A (Tc) 2.1W (Ta), 33W (Tc) Through Hole
Courant - Drainage continu (Id) à 25 ° C:7.8A (Ta), 30A (Tc)
Email:[email protected]

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