AFT18H357-24NR6
Modèle de produit:
AFT18H357-24NR6
Fabricant:
NXP Semiconductors / Freescale
La description:
IC TRANS RF LDMOS
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
65322 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.AFT18H357-24NR6.pdf2.AFT18H357-24NR6.pdf

introduction

We can supply AFT18H357-24NR6, use the request quote form to request AFT18H357-24NR6 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AFT18H357-24NR6.The price and lead time for AFT18H357-24NR6 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AFT18H357-24NR6.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:28V
Tension - Nominale:65V
Transistor Type:LDMOS (Dual)
Package composant fournisseur:OM-1230-4L2L
Séries:-
Alimentation - sortie:63W
Emballage:Tape & Reel (TR)
Package / Boîte:OM-1230-4L2L
Autres noms:935312802528
Noise Figure:-
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Gain:17.5dB
La fréquence:1.81GHz
Description détaillée:RF Mosfet LDMOS (Dual) 28V 800mA 1.81GHz 17.5dB 63W OM-1230-4L2L
Note actuelle:-
Courant - Test:800mA
Email:[email protected]

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