AFT09S200W02GNR3
Modèle de produit:
AFT09S200W02GNR3
Fabricant:
NXP Semiconductors / Freescale
La description:
FET RF 70V 960MHZ PLD
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
56308 Pieces
Heure de livraison:
1-2 days
Fiche technique:
AFT09S200W02GNR3.pdf

introduction

We can supply AFT09S200W02GNR3, use the request quote form to request AFT09S200W02GNR3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AFT09S200W02GNR3.The price and lead time for AFT09S200W02GNR3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AFT09S200W02GNR3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:28V
Tension - Nominale:70V
Transistor Type:LDMOS
Package composant fournisseur:OM-780-2
Séries:-
Alimentation - sortie:56W
Emballage:Tape & Reel (TR)
Package / Boîte:OM-780-2
Autres noms:935320369528
Noise Figure:-
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Gain:19.2dB
La fréquence:960MHz
Description détaillée:RF Mosfet LDMOS 28V 1.4A 960MHz 19.2dB 56W OM-780-2
Note actuelle:-
Courant - Test:1.4A
Email:[email protected]

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