1N8034-GA
1N8034-GA
Modèle de produit:
1N8034-GA
Fabricant:
GeneSiC Semiconductor
La description:
DIODE SCHOTTKY 650V 9.4A TO257
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
73689 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1N8034-GA.pdf

introduction

We can supply 1N8034-GA, use the request quote form to request 1N8034-GA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 1N8034-GA.The price and lead time for 1N8034-GA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 1N8034-GA.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Inverse de crête (max):Silicon Carbide Schottky
Tension - directe (Vf) (max) @ Si:9.4A (DC)
Tension - Ventilation:TO-257
Séries:-
État RoHS:Tube
Temps de recouvrement inverse (trr):No Recovery Time > 500mA (Io)
Résistance @ Si, F:1107pF @ 1V, 1MHz
Polarisation:TO-257-3
Autres noms:1242-1121
1N8034GA
Température d'utilisation - Jonction:0ns
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:1N8034-GA
Description élargie:Diode Silicon Carbide Schottky 650V 9.4A (DC) Through Hole TO-257
Configuration diode:5µA @ 650V
La description:DIODE SCHOTTKY 650V 9.4A TO257
Courant - fuite, inverse à Vr:1.34V @ 10A
Courant - Moyen redressé (Io) (par diode):650V
Capacité à Vr, F:-55°C ~ 250°C
Email:[email protected]

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