SQJ960EP-T1_GE3
SQJ960EP-T1_GE3
Varenummer:
SQJ960EP-T1_GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET 2N-CH 60V 8A
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
63149 Pieces
Leveringstid:
1-2 days
Datablad:
SQJ960EP-T1_GE3.pdf

Introduktion

We can supply SQJ960EP-T1_GE3, use the request quote form to request SQJ960EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ960EP-T1_GE3.The price and lead time for SQJ960EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ960EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Leverandør Device Package:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:36 mOhm @ 5.3A, 10V
Strøm - Max:34W
Emballage:Cut Tape (CT)
Pakke / tilfælde:PowerPAK® SO-8 Dual
Andre navne:SQJ960EP-T1_GE3CT
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:2 N-Channel (Dual)
FET-funktion:Logic Level Gate
Afløb til Source Voltage (VDSS):60V
Detaljeret beskrivelse:Mosfet Array 2 N-Channel (Dual) 60V 8A 34W Surface Mount PowerPAK® SO-8 Dual
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:8A
Email:[email protected]

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