SQJ960EP-T1_GE3
SQJ960EP-T1_GE3
Part Number:
SQJ960EP-T1_GE3
Výrobce:
Electro-Films (EFI) / Vishay
Popis:
MOSFET 2N-CH 60V 8A
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
63149 Pieces
Čas doručení:
1-2 days
Datový list:
SQJ960EP-T1_GE3.pdf

Úvod

We can supply SQJ960EP-T1_GE3, use the request quote form to request SQJ960EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ960EP-T1_GE3.The price and lead time for SQJ960EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ960EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:2.5V @ 250µA
Dodavatel zařízení Package:PowerPAK® SO-8 Dual
Série:Automotive, AEC-Q101, TrenchFET®
RDS On (Max) @ Id, Vgs:36 mOhm @ 5.3A, 10V
Power - Max:34W
Obal:Cut Tape (CT)
Paket / krabice:PowerPAK® SO-8 Dual
Ostatní jména:SQJ960EP-T1_GE3CT
Provozní teplota:-55°C ~ 175°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:735pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:20nC @ 10V
Typ FET:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain na zdroj napětí (Vdss):60V
Detailní popis:Mosfet Array 2 N-Channel (Dual) 60V 8A 34W Surface Mount PowerPAK® SO-8 Dual
Proud - kontinuální odtok (Id) @ 25 ° C:8A
Email:[email protected]

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