SIHD5N50D-GE3
SIHD5N50D-GE3
Varenummer:
SIHD5N50D-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 500V 5.3A TO252 DPK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
38915 Pieces
Leveringstid:
1-2 days
Datablad:
SIHD5N50D-GE3.pdf

Introduktion

We can supply SIHD5N50D-GE3, use the request quote form to request SIHD5N50D-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD5N50D-GE3.The price and lead time for SIHD5N50D-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD5N50D-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-252AA
Serie:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 2.5A, 10V
Power Dissipation (Max):104W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-252-3, DPak (2 Leads + Tab), SC-63
Andre navne:SIHD5N50D-GE3CT
SIHD5N50D-GE3CT-ND
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:18 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:325pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):500V
Detaljeret beskrivelse:N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:5.3A (Tc)
Email:[email protected]

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