SIHD6N65E-GE3
SIHD6N65E-GE3
Varenummer:
SIHD6N65E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 650V 7A TO252
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
33507 Pieces
Leveringstid:
1-2 days
Datablad:
SIHD6N65E-GE3.pdf

Introduktion

We can supply SIHD6N65E-GE3, use the request quote form to request SIHD6N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD6N65E-GE3.The price and lead time for SIHD6N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD6N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:D-PAK (TO-252AA)
Serie:-
Rds On (Max) @ Id, Vgs:600 mOhm @ 3A, 10V
Power Dissipation (Max):78W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-252-3, DPak (2 Leads + Tab), SC-63
Andre navne:SIHD6N65E-GE3CT
SIHD6N65E-GE3CT-ND
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:820pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):650V
Detaljeret beskrivelse:N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:7A (Tc)
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer