SI8900EDB-T2-E1
SI8900EDB-T2-E1
Varenummer:
SI8900EDB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET 2N-CH 20V 5.4A 10-MFP
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
30236 Pieces
Leveringstid:
1-2 days
Datablad:
SI8900EDB-T2-E1.pdf

Introduktion

We can supply SI8900EDB-T2-E1, use the request quote form to request SI8900EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8900EDB-T2-E1.The price and lead time for SI8900EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8900EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 1.1mA
Leverandør Device Package:10-Micro Foot™ CSP (2x5)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:-
Strøm - Max:1W
Emballage:Tape & Reel (TR)
Pakke / tilfælde:10-UFBGA, CSPBGA
Andre navne:SI8900EDB-T2-E1TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:13 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:2 N-Channel (Dual) Common Drain
FET-funktion:Logic Level Gate
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 1W Surface Mount 10-Micro Foot™ CSP (2x5)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:5.4A
Basenummer:SI8900
Email:[email protected]

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