SI5913DC-T1-GE3
SI5913DC-T1-GE3
Varenummer:
SI5913DC-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 20V 4A 1206-8
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
27443 Pieces
Leveringstid:
1-2 days
Datablad:
SI5913DC-T1-GE3.pdf

Introduktion

We can supply SI5913DC-T1-GE3, use the request quote form to request SI5913DC-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5913DC-T1-GE3.The price and lead time for SI5913DC-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5913DC-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:1206-8 ChipFET™
Serie:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:84 mOhm @ 3.7A, 10V
Power Dissipation (Max):1.7W (Ta), 3.1W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:8-SMD, Flat Lead
Andre navne:SI5913DC-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:P-Channel
FET-funktion:Schottky Diode (Isolated)
Drevspænding (Maks. RDS On, Min Rds On):2.5V, 10V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:P-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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