RN2971FE(TE85L,F)
RN2971FE(TE85L,F)
Varenummer:
RN2971FE(TE85L,F)
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
TRANS 2PNP PREBIAS 0.1W ES6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
23939 Pieces
Leveringstid:
1-2 days
Datablad:
RN2971FE(TE85L,F).pdf

Introduktion

We can supply RN2971FE(TE85L,F), use the request quote form to request RN2971FE(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2971FE(TE85L,F).The price and lead time for RN2971FE(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2971FE(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Samler Emitter Opdeling (Max):50V
Vce Mætning (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:2 PNP - Pre-Biased (Dual)
Leverandør Device Package:ES6
Serie:-
Modstand - Emitterbase (R2):-
Modstand - Base (R1):10 kOhms
Strøm - Max:100mW
Emballage:Tape & Reel (TR)
Pakke / tilfælde:SOT-563, SOT-666
Andre navne:RN2971FE(TE85LF)TR
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Frekvens - Overgang:200MHz
Detaljeret beskrivelse:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Nuværende - Collector Cutoff (Max):100nA (ICBO)
Nuværende - Samler (Ic) (Max):100mA
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer