RN2971FE(TE85L,F)
RN2971FE(TE85L,F)
Modello di prodotti:
RN2971FE(TE85L,F)
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
TRANS 2PNP PREBIAS 0.1W ES6
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
23939 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
RN2971FE(TE85L,F).pdf

introduzione

We can supply RN2971FE(TE85L,F), use the request quote form to request RN2971FE(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2971FE(TE85L,F).The price and lead time for RN2971FE(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2971FE(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - rottura collettore-emettitore (max):50V
Vce saturazione (max) a Ib, Ic:300mV @ 250µA, 5mA
Tipo transistor:2 PNP - Pre-Biased (Dual)
Contenitore dispositivo fornitore:ES6
Serie:-
Resistor - Emitter Base (R2):-
Resistor - Base (R1):10 kOhms
Potenza - Max:100mW
imballaggio:Tape & Reel (TR)
Contenitore / involucro:SOT-563, SOT-666
Altri nomi:RN2971FE(TE85LF)TR
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Frequenza - transizione:200MHz
Descrizione dettagliata:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Guadagno in corrente cc (hFE) (min) @ Ic, Vce:120 @ 1mA, 5V
Corrente - Cutoff collettore (max):100nA (ICBO)
Corrente - collettore (Ic) (max):100mA
Email:[email protected]

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