RN2312(TE85L,F)
RN2312(TE85L,F)
Varenummer:
RN2312(TE85L,F)
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
TRANS PREBIAS PNP 0.1W USM
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
18058 Pieces
Leveringstid:
1-2 days
Datablad:
RN2312(TE85L,F).pdf

Introduktion

We can supply RN2312(TE85L,F), use the request quote form to request RN2312(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2312(TE85L,F).The price and lead time for RN2312(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2312(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Samler Emitter Opdeling (Max):50V
Vce Mætning (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:PNP - Pre-Biased
Leverandør Device Package:USM
Serie:-
Modstand - Base (R1):22 kOhms
Strøm - Max:100mW
Emballage:Tape & Reel (TR)
Pakke / tilfælde:SC-70, SOT-323
Andre navne:RN2312(TE85LF)
RN2312(TE85LF)-ND
RN2312(TE85LF)TR
RN2312TE85LF
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:16 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Frekvens - Overgang:200MHz
Detaljeret beskrivelse:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Nuværende - Collector Cutoff (Max):100nA (ICBO)
Nuværende - Samler (Ic) (Max):100mA
Basenummer:RN231*
Email:[email protected]

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