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RN2312(TE85L,F)
- Part Number:
- RN2312(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANS PREBIAS PNP 0.1W USM
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18058 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- RN2312(TE85L,F).pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | PNP - Pre-Biased |
| Supplier Device Package: | USM |
| Series: | - |
| Resistor - Base (R1): | 22 kOhms |
| Power - Max: | 100mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SC-70, SOT-323 |
| Other Names: | RN2312(TE85LF) RN2312(TE85LF)-ND RN2312(TE85LF)TR RN2312TE85LF |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 200MHz |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Base Part Number: | RN231* |
| Email: | [email protected] |
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