RN1115MFV,L3F
RN1115MFV,L3F
Varenummer:
RN1115MFV,L3F
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
TRANS PREBIAS NPN 50V SOT723
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
10114 Pieces
Leveringstid:
1-2 days
Datablad:
RN1115MFV,L3F.pdf

Introduktion

We can supply RN1115MFV,L3F, use the request quote form to request RN1115MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1115MFV,L3F.The price and lead time for RN1115MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1115MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Samler Emitter Opdeling (Max):50V
Vce Mætning (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Leverandør Device Package:VESM
Serie:-
Modstand - Emitterbase (R2):10 kOhms
Modstand - Base (R1):2.2 kOhms
Strøm - Max:150mW
Emballage:Tape & Reel (TR)
Pakke / tilfælde:SOT-723
Andre navne:RN1115MFV,L3F(B
RN1115MFV,L3F(T
RN1115MFVL3FTR
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Frekvens - Overgang:250MHz
Detaljeret beskrivelse:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Nuværende - Collector Cutoff (Max):500nA
Nuværende - Samler (Ic) (Max):100mA
Email:[email protected]

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