RN1115MFV,L3F
RN1115MFV,L3F
Artikelnummer:
RN1115MFV,L3F
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
TRANS PREBIAS NPN 50V SOT723
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
10114 Pieces
Leveranstid:
1-2 days
Datablad:
RN1115MFV,L3F.pdf

Introduktion

We can supply RN1115MFV,L3F, use the request quote form to request RN1115MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1115MFV,L3F.The price and lead time for RN1115MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1115MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Spänning - Samlare Emitter Breakdown (Max):50V
Vce Mättnad (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistortyp:NPN - Pre-Biased
Leverantörs Device Package:VESM
Serier:-
Motstånd - Emitterbas (R2):10 kOhms
Motstånd - Bas (R1):2.2 kOhms
Effekt - Max:150mW
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:SOT-723
Andra namn:RN1115MFV,L3F(B
RN1115MFV,L3F(T
RN1115MFVL3FTR
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Frekvens - Övergång:250MHz
detaljerad beskrivning:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
Likströmsstigning (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Nuvarande - Collector Cutoff (Max):500nA
Nuvarande - Samlare (Ic) (Max):100mA
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer