Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4.9V @ 50µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ SJ |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 5.7A, 10V |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
Emballage: | Original-Reel® |
Pakke / tilfælde: | DirectFET™ Isometric SJ |
Andre navne: | IRF6645TRPBFDKR |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 890pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 100V |
Detaljeret beskrivelse: | N-Channel 100V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.7A (Ta), 25A (Tc) |
Email: | [email protected] |