Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4.8V @ 150µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ MN |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10.3A, 10V |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | DirectFET™ Isometric MN |
Andre navne: | IRF6644TR1PBFTR SP001561794 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 2210pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 100V |
Detaljeret beskrivelse: | N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10.3A (Ta), 60A (Tc) |
Email: | [email protected] |