Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | - |
Vgs (Max): | - |
Teknologi: | SiC (Silicon Carbide Junction Transistor) |
Leverandør Device Package: | SOT-227 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 100A |
Power Dissipation (Max): | 535W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | SOT-227-4, miniBLOC |
Andre navne: | 1242-1317 GA100JT12-227-ND |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Chassis Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 18 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 14400pF @ 800V |
FET Type: | - |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | - |
Afløb til Source Voltage (VDSS): | 1200V |
Detaljeret beskrivelse: | TRANS SJT 1200V 160A SOT227 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 160A (Tc) |
Email: | [email protected] |